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| CJU20N06 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU20N06 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
60V
45mΩ@10 V
20A
TO-252-2L
GENERAL DESCRIPTION
The CJU20N06 uses advanced trench technology and design to
provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURE
z High density cell design for ultra low Rdson
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high EAS
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
1. GATE
2. DRAIN
3. SOURCE
APPLICATION
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible power supply
MARKING:
Equivalent Circuit
CJU20N06= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
Single Pulsed Avalanche Energy
IDM
EAS(1)
Power Dissipation
PD
Thermal Resistance from Junction to Ambient
RθJA
Junction Temperature
TJ
Storage Temperature
Tstg
(1).EAS condition: Tj=25â,VDD=30V,L=0.5mH, RG=25â¦, Starting TJ = 25°C
Value
60
±20
20
60
72
1.25
100
150
-55~+150
www.cj-elec.com
1
Unit
V
A
mJ
W
â/W
â
A,Mar,2016
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