CJU18P10 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU18P10 P-Channel Power MOSFET
V_(BR)DSS
-100V
R_DS(on)MAX
100mΩ@-10V
I_D
-18A
TO-252-2L
GENERAL DESCRIPTION
The CJU18P10 uses advanced trench technology and design to provide excellent
R_DS(on) with low gate charge. It can be used in a wide variety of applications. It is ESD
protested.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
 VDS =-100V,ID =-18A
RDS(on) <100mΩ @ VGS=-10V (Typ:85mΩ)
 ESD Protection
 Advanced trench process technology
 Reliable and rugged
 High density cell design for ultra low On-Resistance
APPLICATION
 Power management in notebook computer
 Portable equipment and battery powered systems
MARKING
EQUIVALENT CIRCUIT
CJU18P10= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
www.cj-elec.com
1
Value
-100
±20
-18
-72
220
100
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
A-1,Feb,2016