CJU10N10 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L Plastic-Encapsulate MOSFETS
CJU10N10
V_(BR)DSS
100V
N-Channel Power MOSFET
R_DS(on)MAX
0.14Ω@10V
I_D
9.6A
TO-252-2L
GENERAL DESCRIPTION
The CJU10N10 provide excellent R_DS(ON), low gate charge and
operation with low gate voltages. This device is suitable for use as a
load switch or in PWM applications.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z Excellent package for good heat dissipation
z Ultra low gate charge
z Low reverse transfer capacitance
z Fast switching capability
z Avalanche energy specified
MARKING
CJU10N10= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
APPLICATION
z Power switching application
EQUIVALENT CIRCUIT
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
www.cj-elec.com
1
Value
100
±20
9.6
38.4
150
100
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
E,Feb,2016