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| CJU04N60A Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L(4R) Plastic-Encapsulate MOSFETS
CJU04N60A
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
ID
3Ω@10V
4A
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
z High Current Rating
z Lower RDS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
TO-252-2L(4R)
1. GATE
2. DRAIN
3. SOURCE
2
1
3
MARKING
CJU04N60A
XXX
CJU04N60A= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
EQUIVALENT CIRCUIT
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8âfrom case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ, TSTG
TL
Value
600
±30
4.0
16
260
100
-55 ~+150
260
Unit
V
A
mJ
â/W
â
www.cj-elec.com
1
B,Apr,2016
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