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| CJU01N80 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L(4R) Plastic-Encapsulate MOSFETS
CJU01N80 N-Channel Power MOSFET
V(BR)DSS
800V
RDS(on)MAX
13.5Ω@10V
ID
TO-252-2L(4R)
1A
GENERAL DESCRIPTION
The CJU01N80 is an N-channel mode power MOSFET using
advanced technology to provide costomers with planar stripe. This
technology specializes in allowing a minimum on-state resistance and
superior switching performance. It also can withstand high energy pulse
in the avalanche and commutation mode. The CJU01N80 is universally
applied in high efficiency switch mode power supply.
FEATURE
z Excellent package for good heat dissipation
z High switching speed
z 100% avalanche tested
1. GATE
2. DRAIN
3. SOURCE
2
1
3
APPLICATION
z Power switching application
z DC/DC converters
MARKING
CJU01N80
XXX
CJU01N80= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
EQUIVALENT CIRCUIT
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8âfrom case for 5 seconds
Symbol
VDS
VGS
ID
IDM
EAS
RθJA
TJ
TSTG
TL
Value
800
±30
1
4
90
100
150
-55 ~+150
260
Unit
V
A
mJ
â/W
â
www.cj-elec.com
1
D,Apr,2016
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