CJT04N15 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-223 Plastic-Encapsulate MOSFETS
CJT04N15
V_(BR)DSS
150V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
160mΩ@10V
4A
GENERAL DESCRIPTION
This CJT04N15 use advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.It
can be used in a wide variety of applications.
SOT-223
1. GATE
2. DRAIN
3. SOURCE
1
2
3
FEATURE
z High density cell design for ultra low RDS(ON)
z Fully characterized avalanche voltage and current
z Excellent package for good heat dissipation
MARKING
T04N15
151
T04N15= Device code
151 =Code
EQUIVALENT CIRCUIT
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GS
I_D
I_DM
R_θJA
T_J
T_STG
T_L
Value
150
±20
4
16
125
150
-55 ~+150
260
Unit
V
A
℃/W
℃
www.cj-elec.com
1
A-2,May,2016