CJS8820 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
CJS8820
V_(BR)DSS
20V
TSSOP8 Plastic-Encapsulate MOSFETS
Dual N-Channel MOSFET
R_DS(on)MAX
I_D
21mΩ@¹⁰V
24mΩ @4.5V
28^mΩ@3.8V
7A
32mΩ@^2.5V
50mΩ@1.8V
TSSOP8
DESCRIPTION
The CJS8820 uses advanced trench technology to provide excellent
R_DS(ON) and low gate charge. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration.
MARKING:
Equivalent Circuit
S8820= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
*Repetitive rating：Pluse width limited by junction temperature
Symbol
V_DS
V_GS
I_D
I_DM *
R_θJA
T_j
T_stg
T_L
www.cj-elec.com
1
Value
20
±12
7
30
125
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
G,Mar,2016