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| CJS8804 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP8 Plastic-Encapsulate MOSFETS
CJS8804 Dual N-Channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
13PÈ#9
14PÈ #9
9
15.5PÈ#9
8$
19 PÈ#9
27PÈ#9
TSSOP8
DESCRIPTION
The CJS8804 use advanced trench technology to provide excellent
RDS(ON) and low gate charge. It is ESD protected. This device is suitable
for use as a uni-directional or bi-directional load switch,facilitated by its
common-drain configuration.
MARKING:
Equivalent Circuit
D1/D2 S2 S2 G2
8 7 65
S8804= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS (Ta=25Я unless otherwise noted)
1 2 34
D1/D2 S1 S1 G1
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current
ID
Pulsed Drain Current
IDM *
Thermal Resistance from Junction to Ambient
RÈJA
Junction Temperature
Tj
Storage Temperature
Tstg
Lead Temperature for Soldering Purposes(1/8ââ from case for 10 s)
TL
* Repetitive rating : Pulse width limited by junction temperature.
Value
20
±12
8
30
125
150
-55~+150
260
ZZZFMHOHFFRP
1
Unit
V
V
A
A
Я/W
Я
Я
Я
FMar6
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