CJS8205 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – D ual N-channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TSSOP8 Plastic-Encapsulate MOSFETs
CJS8205 Dual N-channel MOSFET
V_(BR)DSS
19 V
R_DS(on)MAX
I_D
25mΩ@4.5V
6A
32mΩ@2.5V
TSSOP8
FEATURE
z TrenchFET Power MOSFET
z Excellent R_DS(on)
z Low Gate Charge
z High Power and Current Handing Capability
z Surface Mount Package
APPLICATION
z Battery Protection
z Load Switch
z Power Management
MARKING
Equivalent Circuit
S8205
YY
S8205
YY
S8205= Device code , YY=Date Code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
V_DS
V_GS
I_D
I_DM
R_θJA
T_J
T_STG
T_L
Value
19
±10
6
25
125
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
www.cj-elec.com
1
A-1,Jul,2015