CJQ9926 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ9926 Dual N-Channel MOSFET
V_(BR)DSS
20V
R_DS(on)MAX
40mΩ@2.5V
30mΩ@ 4.5V
I_D
4.8A
SOP8
FEATURE
z Advanced trench process technology
z High density cell design for ultra low on-resistance
z High power and current handing capability
z Ideal for Liion battery pack applications
MARKING
Q9926= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source voltage
Gate-Source Voltage
Continuous Drain Current *
Pulsed Drain Current
Power Dissipation *
Thermal Resistance from Junction to Ambient *
Junction Temperature
Storage Temperature
* Surface Mounted on 1” x 1” FR4 Board.
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_stg
Value
20
±12
4.8
30
1.25
100
150
-55~+150
Unit
V
V
A
A
W
℃/ W
℃
℃
www.cj-elec.com
1
D,Mar,2016