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| CJQ9435 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ9435
V(BR)DSS
-30V
P-Channel Power MOSFET
RDS(on)MAX
60 mΩ@-10V
70 mΩ@-6V
105 mΩ@-4.5V
ID
-5.1A
DESCRIPTION
The CJQ9435 uses advanced trench technology to provide excellent
RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a low side switch in Notebook
CPU core power conversion.
APPLICATIONS
z Battery Switch
z Load Switch
SOP8
MARKING:
Q9435= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Equivalent Circuit
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8ââ from case for 10s)
(1).EAS condition: VDD=-50V,L=0.5mH, RG=25â¦, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
-30
±20
-5.1
-20
20
1.4
89
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
â/W
â
â
â
ZZZFMHOHFFRP
1
IMar6
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