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CJQ7328 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ7328 Dual P-Channel MOSFET
V(BR)DSS
-30V
RDS(on)MAX
ID
21mΩ@-10V
-8A
32mΩ @-4.5V
DESCRIPTION
The CJQ7328 uses advanced processing techniques to achieve
extremely low on-resistance. This benefit, combined with the
ruggedized device design that the MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device
for use in battery and load management.
FEATURES
Ultra Low On-Resistance
SOP8
MARKING:
Equivalent Circuit
Q7328= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Maximum ratings (Ta=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation (note 2)
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IDM
PD
RθJA
TJ
Tstg
Value
-30
±20
-8
-32
1.4
89
150
-55 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
E,Mar,2016