CJQ6601 Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-channel and P-channel Complementary MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ6601 N-channel and P-channel Complementary MOSFETS
V_(BR)DSS
30 V
-30V
R_DS(on)MAX
35mΩ@10V
40mΩ@4.5V
52mΩ@2.5V
65 mΩ@-10V
75mΩ@-4.5V
90mΩ@-2.5V
I_D
5.8 A
-4.2A
SOP8
DESCRIPTIONS
The Device uses advanced trench technology to provide excellent
R_DS(ON) and low gate charge. The complementary MOSFETs form a
high-speed power inverter, suitable for a multitude of applications.
FEATURES
 Including a N-ch CJ3400 MOS and a P-ch
 Surface mount package
CJ3401 MOS (independently) in a package
 Low R_DS(on)
APPLICATIONS
 Suitable for a multitude of applications.
 High-speed power inverter
MARKING:
Q6601= Device code
Solid dot=Pin1 indicator
EQUIVALENT CIRCUIT
D1 D1 D2 D2
8
7
6
5
Solid dot = Green molding compound device,
if none, the normal device
YY= Code
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
1
2
3
4
S1 G1 S2 G2
Symbol
Parameter
Value
N-ch MOS
P-ch MOS
VDS
Drain-Source Voltage
30
-30
VGS
Gate-Source Voltage
±12
±12
ID
Drain Current -Continuous(Note1)
5.8
-4.2
IDM
Drain Current - Pulse(Note3)
23.2
-16.8
Power Dissipation, Temperature and Thermal Resistance
PD
Power Dissipation
1.4
RθJA
Thermal Resistance from Junction to Ambient
89
Tj
Junction Temperature
Tstg
Storage Temperature
150
-55~+150
TL
Lead Temperature
260
Unit
V
V
A
A
W
℃/W
℃
℃
℃
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1
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