CJQ60P05 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel Enhancement Mode Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ60P05 ^{P-Channel Enhancement Mode Power MOSFET}
V(BR)DSS
RDS(on)MAX
I_D
-60V
80mΩ@-10V
-5A
SOP8
Description
The CJQ60P05 uses advanced trench technology and
design to provide excellent R_DS(ON) with low gate charge. It
can be used in a wide variety of applications.
Feature
ƽ V_DS =-60V,I_D =-5A
R_DS(ON) <80mȍ @ V_GS=-10V
ƽ High density cell design for ultra low RDS(ON)
ƽ Fully characterized avalanche voltage and current
ƽ Excellent package for good heat dissipation
MARKING:
Application
ƽ Power switching application
ƽ Hard switched and high frequency circuits
ƽ DC-DC Converter
Equivalent Circuit
Q60P05
YY
Absolute Maximum Ratings (Ta=25ćunless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
I_D
Pulsed Drain Current(Note 1)
I_DM
Operating Junction
T_J
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8'' form case for 10s)
T_STG
TL
Thermal Resistance ,Junction-to-Ambient(Note 2)
R_șJA
www.cj-elec.com
1
Limit
-60
±20
-5
-25
150
-55 ~+150
260
100
Unit
V
V
A
A
ć
ć
ć
ć/W
A-3,Nov,2015