CJQ4828 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4828 Dual N-Channel MOSFET
V_(BR)DSS
60V
R_DS(on)MAX
56mΩ@10V
77mΩ@ 4.5V
I_D
4.5A
SOP8
DESCRIPTION
The CJQ4828 uses advanced trench technology to provide excellent
R_DS(ON) and low gate charge. This device is suitable for use as a load switch
or in PWM applications.
MARKING:
Equivalent Circuit
Q4828= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (t ≤10s) (note 1)
Pulsed Drain Current (note 2)
Power Dissipation
Thermal Resistance from Junction to Ambient (t ≤10s) (note 1)
Avalanche Current (note 2)
Repetitive Avalenche Energy 0.1mH (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
I_AR,I_AS
E_AR,E_AS
T_J
T_STG
Value
60
±20
4.5
20
1.25
100
19
18
150
-55~ 150
Units
V
V
A
A
W
℃/W
A
mJ
℃
℃
www.cj-elec.com
1
E,Mar,2016