CJQ4822 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4822 Dual N-Channel MOSFET
V_(BR)DSS
30V
R_DS(on)MAX
16mΩ@10V
26mΩ@4.5 V
I_D
8.5A
SOP8
DESCRIPTION
The CJQ4822 uses advanced trench technology to provide excellent
R_DS(ON) and low gate charge. This device is suitable for use as a load switch
or in PWM applications.
MARKING:
Equivalent Circuit
Q4822= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (t ≤10s) (note 1)
Pulsed Drain Current (note 2)
Power Dissipation
Thermal Resistance from Junction to Ambient (t ≤10s) (note 1)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
30
±20
8.5
30
1.4
89
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
www.cj-elec.com
1
E,Mar,2016