CJQ4503 Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-and P-Channel Enhancement Mode Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4503
N-and P-Channel Enhancement Mode Power MOSFET
V_(BR)DSS
30 V
R_DS(on)MAX
28mΩ@10V
42mΩ@4.5V
I_D
6.9A
SOP8
-30V
36 mΩ@-10V
55mΩ@-4.5V
-6.3A
DESCRIPTION
Advance Power MOSFETs provide the designer with the best
combination of fast switching, ruggedized device desigh, low
on-resistance and cost -effectiveness.
The SOP8 package is widely preferred for commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters.
MARKING:
Equivalent Circuit
Q4503
YY
Q4503= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
D1 D1 D2 D2
8
7
6
5
1
2
3
4
S1 G1 S2 G2
Maximum ratings ( T_a=25℃ unless otherwise noted)
Parameter Sy
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current ^a
Pulsed Drain Current ^b
T_a=25℃
T_a=70℃
Power Dissipation
Thermal Resistance from Junction to Ambient
Operating Junction Temperature
Storage Temperature
Notes :
a. These tests are performed with infinite heat sink.
b.Pulse width by Max.junction temperature.
mbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
N-Channel
P-Channel
30
-30
±20
±20
6.9
-6.3
5.5
-5
20
-20
1.4
89
150
-55 ~+150
Unit
V
A
W
℃/W
℃
www.cj-elec.com
1
G,Mar,2016