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| CJQ4459 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4459
V(BR)DSS
-30V
P-Channel Power MOSFET
RDS(on)MAX
46mΩ@ -10V
72mΩ@ -4.5V
ID
-6.5A
SOP8
DESCRIPTION
The CJQ4459 combines advanced trench MOSFET technology with a low
resistance package to provide extremely low RDS(ON). This device is ideal for
load switch and battery protection applications
APPLICATIONS
z Battery Switch
z Load Switch
MARKING
Front side
Q4459= Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
YY=Date Code
Equivalent Circuit
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8ââ from case for 10s)
(1).EAS condition: VDD=-50V,L=0.1mH, RG=25â¦, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
-30
±20
-6.5
-26
14
1.4
89
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
â/W
â
â
â
ZZZFMHOHFFRP
1
DMar6
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