CJQ4438 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4438 N-Channel MOSFET
V_(BR)DSS
60 V
R_DS(on)MAX
22mΩ@10V
36mΩ@4.5V
I_D
8.2A
SOP8
FEATURE
z TrenchFET Power MOSFET
z Low R _DS(on)
z Low Gate Charge
MARKING
APPLICATION
z Load Switch
z PWM applications
Equivalent Circuit
Q4438
YY
Front side
Q4438
YY
Q4438 = Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
YY=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (note 2)
Power Dissipation
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
60
±20
8.2
40
1.25
100
150
-55~+150
Unit
V
V
A
A
W
℃/W
℃
℃
www.cj-elec.com
1
I,May,2015