CJQ4435 Datasheet, PDF (1/5 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4435 P-Channel Power MOSFET
V_(BR)DSS
-30V
R_DS(on)MAX
24mΩ@ -10V
35mΩ@ -4.5V
I_D
-9.1A
DESCRIPTION
The CJQ4435 uses advanced trench technology to provide excellent
R_DS(on), shoot-through immunity, body diode characteristics and ultra-low gate
resistance. This device is ideally suited for use as a low side switch in Notebook
CPU core power conversion.
SOP8
APPLICATIONS
z Battery Switch
z Load Switch
MARKING
Q4435= Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
YY=Date Code
Front side
Equivalent Circuit
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).E_AS condition: V_DD=-50V,L=0.5mH, R_G=25Ω, Starting T_J = 25°C
Symbol
V_DS
V_GS
I_D
I_DM
E_AS(1)
P_D
R_θJA
T_J
T_stg
T_L
Limit
-30
±20
-9.1
-36
20
1.4
89
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
www.cj-elec.com
1
F,Mar,2016