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CJQ4407 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel Power MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4407 P-Channel Power MOSFET
V(BR)DSS
-30 V
RDS(on)MAX
13mΩ@-10V
17mΩ@-6V
ID
-12A
SOP8
DESCRIPTION
The CJQ4407 combines advanced trench MOSFET technology
with a low resistance package to provide extremely low RDS(ON). This
device is ideal for load switch and battery protection applications
APPLICATIONS
z Battery protection applications
z Load switch
MARKING
Q4407= Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
YY=Date Code
Front side
MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).EAS condition: VDD=-50V,L=0.5mH, RG=25Ω, Starting TJ = 25°C
www.cj-elec.com
1
Equivalent Circuit
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
-30
±20
-12
-48
115
1.4
89
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-3,Feb,2016