CJQ4406 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ4406 N-Channel Power MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
12mΩ@10V
30 V
10A
16mΩ@4.5V
SOP8
DESCRIPTION
The CJQ4406 uses advanced trench technology to provide excellent R DS(ON)
with low gate charge. This device is suitable for high side switch in SMPS and
general purpose applications.
APPLICATIONS
z High side switch in SMPS
z Load Switch
MARKING
Q4406= Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
YY=Date Code
Front side
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).E_AS condition: V_DD=50V,L=0.5mH, R_G=25Ω, Starting T_J = 25°C
Equivalent Circuit
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
Symbol
V_DS
V_GS
I_D
I_DM
E_AS(1)
P_D
R_θJA
T_J
T_stg
T_L
Limit
30
±20
10
40
105
1.4
89
150
-55 ~+150
260
www.cj-elec.com
1
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-3,Feb,2016