CJQ08N02K Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ08N02K N-Channel Power MOSFET
DESCRIPTION
The device uses advanced trench technology to provide excellent RDS(ON),
SOP8
low gate charge and operation with gate voltages as low as 1.8V. This device is
suitable for use as a load switch or in PWM applications .It is ESD protested
FEATURES
 Advanced high cell density Trench technology
 Super Low Gate Charge
 Green Device Available
 High power and current handing capability
 Surface mount package
 ESD protested
APPLICATIONS
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
 Uni-directional or Bi-directional load switch
 Low voltage application, notebook computer power
management
MARKING
 Other battery powered circuits where high-side
switching
Q08N02K =Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
YY=Date Code
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
Symbol
VDS
VGS
ID
IDM
EAS(3)
PD
RθJA
TJ
Tstg
TL
Limit
20
±12
8
32
50
1.4
89
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
www.cj-elec.com
1
A-2,Jun,2015