CJQ07N10 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ07N10 N-Channel Power MOSFET
DESCRIPTION
The device is the highest performance trench N-ch MOSFETs with extreme
SOP8
high cell density , which provide excellent RDSON and gate charge for most of
the synchronous buck converter applications . 100% EAS guaranteed with full
function reliability approved.
FEATURES
 Advanced high cell density Trench technology
 Super Low Gate Charge
 Green Device Available
APPLICATIONS
 Secondary Synchronous Rectifier
 LED TV Back Light
MARKING
D
D
D
D
8
7
6
5
1
2
3
4
S
S
S
G
Q07N10= Device code
Solid dot=Pin1 indicator
Solid dot = Green molding compound device,
if none, the normal device
Front side
YY=Date Code
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
VDS
100
V
Gate-Source Voltage
VGS
±20
V
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
ID
7
A
IDM
28
A
EAS(1)
16
mJ
PD
1.4
W
RθJA
89
℃/W
TJ
150
℃
Storage Temperature Range
Tstg
-55 ~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
TL
260
℃
(1).EAS condition: VDD=25V,L=0.1mH, RG=25Ω, Starting TJ = 25°C
www.cj-elec.com
1
A-3,Aug,2015