CJQ05N10 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – Dual N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOP8 Plastic-Encapsulate MOSFETS
CJQ05N10 Dual N-Channel MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
100V
140mΩ@10V
5A
SOP8
DESCRIPTION
The CJQ05N10 uses advanced trench technology and design to
provide excellent R_DS(ON) with low gate charge .This device is suitable for use
in a wide variety of applications.
FEATURES
z Lead free product is acquired
z Special process technology for high ESD capability
z High density cell design for ultra low R_DS(on)
z Good stability and uniformity with high E_AS
z Excellent package for good heat dissipation
MARKING:
APPLICATION
z Power switching application
z Hard switching and high frequency circuits
z Uninterruptible power supply
Equivalent Circuit
Q05N10= Device code
YY=Date Code
Solid dot = Pin1 indicator
Solid dot = Green molding compound device,
if none,the normal device.
Maximum ratings (T_a=25℃ unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (note 1)
Power Dissipation(note 1)
Thermal Resistance from Junction to Ambient (note 2)
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM
P_D
R_θJA
T_J
T_STG
Value
100
±20
5
24
1.4
89
150
-55~+150
www.cj-elec.com
1
Unit
V
V
A
A
W
℃/W
℃
℃
D,Mar,2016