CJPF55P30 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF55P30
V_(BR)DSS
-55V
P-Channel Power MOSFET
R_DS(on)MAX
40mΩ@-10V
I_D
-30A
TO-220F
DESCRIPTION
The CJPF55P30 uses advanced trench technology and design
to provide excellent R_DS(ON) with low gate charge. It can be used in a
wide variety of applications.
FEATURES
z High density cell design for ultra low R_DS(ON)
z Fully characterized avalanche voltage and current
z Good stability and uniformity with high E_AS
z Excellent package for good heat dissipation
APPLICATIONS
1. GATE
2. DRAIN
3. SOURCE
z Power switching application
z Hard switched and high frequency circuits
z Uninterruptible Power Supply(UPS)
MARKING
EQUIVALENT CIRCUIT
1₂₃
CJPF55P30
XXX
CJPF55P30= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).E_AS condition: V_DD=-25V,L=0.5mH, R_G=25Ω, Starting T_J = 25°C
Symbol
V_DS
V_GS
I_D
I_DM
E_AS(1)
P_D
R_θJA
T_J
T_stg
T_L
www.cj-elec.com
1
Limit
-55
±20
-30
-120
225
2
62.5
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
C,May,2016