CJPF10N60 Datasheet, PDF (1/4 Pages) ZP Semiconductor – TO-220F Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF10N60 N-Channel Power MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
600V
1.0Ω@10V
10A
TO-220F
Description
The CJPF10N60 is a high voltage and high current
power MOSFET, designed to have characteristics, such as fast
switching time, low gate charge, low on-state resistance and have
rugged avalanche characteristics.
This power MOSFET is usually used at high speed switching
applications in power supplies, PWM motor controls, high efficient DC
to DC converters and bridge circuits.
FEATURES
z Low Crss
z Fast Switching
z 100% avalanche tested
1. GATE
2. DRAIN
3. SOURCE
1₂₃
MARKING
EQUIVALENT CIRCUIT
CJPF10N60
XXX
CJPF10N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_J
T_stg
www.cj-elec.com
1
Value
600
±30
10
2
62.5
150
-50 ~+150
Unit
V
A
W
℃/W
℃
E,May,2016