CJPF08N80 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF08N80
V_(BR)DSS
800V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
1.45Ω@10V
8A
TO-220F
GENERAL DESCRIPTION
The CJPF8N80 is an N-channel mode power MOSFET, it uses
UTC’s advanced technology to provide costumers planar stripe and
DMOS technology. This technology allows a minimum on-state
resistance, superior switching performance. It also can withstand high
energy pulse in the avalanche and commutation mode.
The CJPF8N80 is generally applied in high efficiency switch
mode power supplies.
FEATURE
z Lowe gate charge
z Lowe C_rss
z Fast switching
z 100% avalanche tested
z Improved dv/dt capability
z RoHS product
1. GATE
2. DRAIN
3. SOURCE
1₂₃
MARKING
EQUIVALENT CIRCUIT
CJPF08N80
XXX
CJPF08N80= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
1/8”from Case for 5 Seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
Value
800
±30
8
32
850
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
B,May,2016