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| CJPF05N60 Datasheet, PDF (1/4 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF05N60 N-Channel Power MOSFET
V(BR)DSS
600V
RDS(on)MAX
2.5Ω@10V
ID
4.5A
TO-220F
Description
This advanced high voltage MOSFET is designed to withstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode with fast
recovery time.
Designed for high voltage, high speed switching applications
1. GATE
2. DRAIN
3. SOURCE
123
such as power suplies, converters, power motor controls and bridge
circuits.
FEATURES
z Low RDS(on)
z Lower Capacitances
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJPF05N60
XXX
CJPF05N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25â unless otherwise noted)
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Single Pulsed Avalanche Energy (note1)
Power Dissipation (note2,Ta=25â)
Maximum Power Dissipation (note3,Tc=25â)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
VDS
VGS
ID
EAS
PD
RθJA
TJ
Tstg
Value
600
±30
4.5
250
2
120
62.5
150
-50 ~+150
Unit
V
A
mJ
W
â/W
â
www.cj-elec.com
1
D,May,2016
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