CJPF04N80 Datasheet, PDF (1/4 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF04N80
V_(BR)DSS
800V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
3.0Ω@10V
4A
TO-220F
GENERAL DESCRIPTION
This is a N-channel mode power MOSFET using advanced
technology to provide planar stripe and DMOS technology. This
technology is specialized in allowing a minimum on-state resistance,
and superior switching performance. It also can withstand high energy
pulse in the avalanche and commutation mode. It is universally
applied in high efficiency switch mode power supply.
FEATURE
z High Current Rating
z Lower R_DS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Avalanche Energy Specified
z High Switching Speed
1. GATE
2. DRAIN
3. SOURCE
1₂₃
MARKING
EQUIVALENT CIRCUIT
CJPF04N80
XXX
CJPF04N80= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
www.cj-elec.com
1
Value
800
±30
4.0
16
170
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
B,May,2016