CJPF04N70 Datasheet, PDF (1/3 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF04N70
V_(BR)DSS
700V
N-Channel Power MOSFET
R_DS(on)MAX
2.8Ω@10V
I_D
4.4A
TO-220F
GENERAL DESCRIPTION
This is a high voltage power MOSFET and is designed to have
better characteristics, such as fast switching time, low gate charge,
low on-state resistance and high rugged avalanche. This high speed
switching power MOSFET is usually used in power supplies, PWM
motor controls, high efficient DC to DC converters and bridge circuits.
FEATURE
z High Current Rating
z Lower R_DS(on)
z Lower Reverse Transfer Capacitance
z Ultra Low Gate Charge
z Avalanche Energy Specified
z High Switching Speed
1. GATE
2. DRAIN
3. SOURCE
1₂₃
MARKING
EQUIVALENT CIRCUIT
CJPF04N70
XXX
CJPF04N70= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
1/8”from Case for 5 Seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
Value
700
±30
4.4
17.6
260
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
A-3,May,2016