 English |
|
|
|
|
|
|
|
| CJPF04N60 Datasheet, PDF (1/4 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS | |||
| |||
|
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF04N60
V(BR)DSS
600V
600V N-Channel Power MOSFET
RDS(on)MAX
ID
3Ω@10V
4A
TO-220F
General Description
This advanced high voltage MOSFET is designed to wighstand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode wigh fast
recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls
and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
123
FEATURE
z High Current Rating
z Lower Rds(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter VSD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJPF04N60
XXX
CJPF04N60= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (Ta=25â unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain-Source Diode Forward Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance fromJunction to Ambient
Operating and Storage Temperature Range
Maximum lead temperure for soldering purposes ,
1/8âfrom case for 5 seconds
Symbol
VDS
VGSS
ID
IS
EAS
RθJA
TJ, TSTG
TL
Value
600
±30
4.0
4.0
260
62.5
-55 ~+150
260
Unit
V
A
mJ
â/W
â
www.cj-elec.com
1
G,May,2016
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese