CJPF03N80 Datasheet, PDF (1/4 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate MOSFETS
CJPF03N80 N-Channel Power MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
800V
4.2Ω@10V
3A
TO-220F
GENERAL DESCRIPTION
The CJPF03N80 provide excellent R_DS(ON), low gate charge
and operation with low gate voltages. This device is suitable for use
as a load switch or in PWM applications.
FEATURE
z Excellent package for good heat dissipation
z Ultra low gate charge
z Low reverse transfer capacitance
z Fast switching capability
z Avalanche energy specified
1. GATE
2. DRAIN
3. SOURCE
1₂₃
APPLICATION
z Power switching application
MARKING
EQUIVALENT CIRCUIT
CJPF03N80
XXX
CJPF03N80= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
Value
800
±30
3
10
170
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
B,May,2016