CJP85N80 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP85N80 N-Channel Power MOSFET
V_(BR)DSS
R_DS(on)MAX
I_D
85V
8.5m Ω@10V
80A
DESCRIPTION
The CJP85N80 uses advanced trench technology and design to
provide excellent R_DS(on) with low gate charge. Good stability and
uniformity with high E_AS .This device is suitable for use in PWM,
load switching and general purpose applications.
TO-220-3L-C
1. GATE
2. DRAIN
FEATURE
 Advanced trench process technology
 Special designed for convertors and power controls
 High density cell design for ultra low R_DS(on)
 Fully characterized avalanche voltage and current
 Fast switching
 Good stability and uniformity with high E_AS
 Excellent package for good heat dissipation
 Special process technology for high ESD capability
3. SOURCE _{1 2 3}
APPLICATION
 Power switching application
 Hard switched and high frequency circuits
 Uninterruptible power supply
MARKING
EQUIV ALENT CIRCUIT
CJP85N80
YY
CJP85N80= Device code
Solid dot = Green molding compound device,
if none, the normal device
YY = Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Symbol
Drain-Source voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
I_D
Pulsed Drain Current (note 1)
I_DM
Power Dissipation
Maximum Power Dissipation
(note 2 , T_a=25℃)
(note 3 , T_c=25℃)
P_D
Single Pulsed Avalanche Energy (note 4)
E_AS
Thermal Resistance from Junction to Ambient
R_θJA
Junction Temperature
T_j
Storage Temperature
T_stg
Notes 1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. This test is performed with no heat sink at T_a=25℃.
3. This test is performed with infinite heat sink at T_c=25℃.
4. E_AS condition: T_j=25℃,V_DD=40V,V_GS=10V,L=0.5mH,R_g=25Ω.
Value
85
±20
80
320
2
170
620
62.5
150
-55 ~+150
www.cj-elec.com
1
Unit
V
A
W
W
mJ
℃/W
℃
D,Jul,2016