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| CJP80N04 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET | |||
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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP80N04 N-Channel Power MOSFET
V(BR)DSS
RDS(on)MAX
ID
7mΩ@10V
40 V
80A
20mΩ@4.5V
DESCRIPTION
The CJP80N04 uses advanced trench technology and design
to provide excellent RDS(ON) with low gate charge. It can be used in a
wide variety of applications.
TO-220-3L-C
1. GATE
2. DRAIN
3. SOURCE
123
FEATURES
z High density cell design for ultra low RDS(ON)
z Fully characterized Avalanche voltage and current
z Good stability and uniformity with high EAS
APPLICATIONS
z Power switching application
z Hard switched and high frequency circuits
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
z Uninterruptible Power Supply
MARKING
EQUIV ALENT CIRCUIT
CJP8N
XXX
CJP80N04= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
MAXIMUM RATINGS ( Ta=25â unless otherwise noted )
Drain-Source Voltage
Parameter
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8ââ from case for 10s)
(1).EAS condition: VDD=20V,L=0.5mH, RG=25â¦, Starting TJ = 25°C
Symbol
VDS
VGS
ID
IDM
EAS(1)
PD
RθJA
TJ
Tstg
TL
Limit
40
±20
80
320
350
2
62.5
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
â/W
â
â
â
www.cj-elec.com
1
A-1,Apr,2016
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