CJP55H12 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP55H12 N-Channel Power MOSFET
TO-220-3L-C
GENERAL DESCRIPTION
The CJP55H12 uses advanced trench technology and design to
provide excellent R_DS(on) with low gate charge. It can be used in a wide
variety of applications.
FEATURE
 High density cell design for ultra low Rdson
 Fully characterized avalanche voltage and current
 Good stability and uniformity with high EAS
 Excellent package for good heat dissipation
 Special process technology for high ESD capability
1. GATE
2. DRAIN
3. SOURCE
APPLICATION
 Power switching application
 Hard switched and high frequency circuits
 Uninterruptible power supply
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum Lead Temperure for Soldering Purposes ,
1/8”from Case for 5 Seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
Value
55
±20
120
420
1100
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
A-3,Mar,2015