CJP15H03 Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L-C Plastic-Encapsulate MOSFETS
CJP15H03 N-Channel Power MOSFET
DESCRIPTION
TO-220-3L-C
The CJP15H03 uses advanced trench technology and design to
provide excellent R_DS(ON) with low gate charge. It can be used in a
wide variety of applications.
1. GATE
2. DRAIN
3. SOURCE
FEATURES
z High density cell design for ultra low R_DS(ON)
z Fully characterized Avalanche voltage and current
z Good stability and uniformity with high E_AS
APPLICATIONS
z Power switching application
z Hard switched and high frequency circuits
z Excellent package for good heat dissipation
z Special process technology for high ESD capability
z Uninterruptible Power Supply
EQUIVALENT CIRCUIT
MAXIMUM RATINGS ( T_a=25℃ unless otherwise noted )
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Lead Temperature for Soldering Purposes(1/8’’ from case for 10s)
(1).E_AS condition: V_DD=20V,L=1mH, R_G=25Ω, Starting T_J = 25°C
Symbol
V_DS
V_GS
I_D
I_DM
E_AS(1)
P_D
R_θJA
T_J
T_stg
T_L
www.cj-elec.com
1
Limit
30
±20
150
600
1700
2
62.5
150
-55 ~+150
260
Unit
V
V
A
A
mJ
W
℃/W
℃
℃
℃
A-2,Mar,2015