CJP12N65 Datasheet, PDF (1/4 Pages) ZP Semiconductor – N -Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP12N65
V_(BR)DSS
650V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
0.85Ω@10V
12A
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
high energy device also offers a drain-to-source diode fast
recovery time. Designed for high voltage, high speed switching
applications such as power supplies, converters, power motor
controls and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
FEATURE
z High Current Rating
z Lower R_DS(on)
z Low Reverse Transfer Capacitance
z Fast Switching Capability
z Tighter V_SD Specifications
z Avalanche Energy Specified
MARKING
Equivalent Circuit
CJP12N65= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX= Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current(note1)
Single Pulsed Avalanche Energy (note2)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes ,
1/8”from case for 5 seconds
Symbol
V_DS
V_GSS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
www.cj-elec.com
1
Value
650
±30
12
48
540
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
D,Feb,2016