CJP08N65 Datasheet, PDF (1/4 Pages) ZP Semiconductor – Plastic-Encapsulate MOSFETS

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP08N65
V_(BR)DSS
650V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
1.4Ω@10V
8A
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
recovery time. Desighed for high voltage, high speed switching
high energy device also offers a drain-to-source diode fast
applications such as power supplies, converters, power motor
controls and bridge circuits.
FEATURE
 High Current Rating
 Lower R_DS(on)
 Lower Capacitance
 Lower Total Gate Charge
 Tighter V_SD Specifications
 Avalanche Energy Specified
1. GATE
2. DRAIN
3. SOURCE
1_{2 3}
MARKING
EQUIVALENT CIRCUIT
CJP08N65
XXX
CJP08N65= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
GD S
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purposes ,
Duration for 5 Seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J, T_STG
T_L
Value
650
±30
8
32
250
62.5
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
C,Apr,2016