CJP05N60B Datasheet, PDF (1/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220-3L Plastic-Encapsulate MOSFETS
CJP05N60B
V_(BR)DSS
600V
N-Channel Power MOSFET
R_DS(on)MAX
I_D
2.5Ω@10V
5A
TO-220-3L
GENERAL DESCRIPTION
This advanced high voltage MOSFET is designed to stand
high energy in the avalanche mode and switch efficiently. This new
recovery time. Desighed for high voltage, high speed switching
high energy device also offers a drain-to-source diode fast
applications such as power supplies, converters, power motor
controls and bridge circuits.
1. GATE
2. DRAIN
3. SOURCE
1_{2 3}
FEATURE
z High Current Rating
z Lower R_DS(on)
z Lower Capacitance
z Lower Total Gate Charge
z Tighter V_SD Specifications
z Avalanche Energy Specified
MARKING
EQUIVALENT CIRCUIT
CJP05N60B= Device code
Solid dot = Green molding compound device,
if none, the normal device
XXX=Date Code
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Single Pulsed Avalanche Energy (note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature Range
Maximum lead temperure for soldering purposes ,
Duration 5 seconds
Symbol
V_DS
V_GS
I_D
I_DM
E_AS
R_θJA
T_J
T_STG
T_L
Value
600
±30
5
20
250
62.5
150
-55 ~+150
260
Unit
V
A
mJ
℃/W
℃
www.cj-elec.com
1
B,Apr,2016