CJND2010 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB5X2-6L-A Plastic-Encapsulate MOSFETS
CJND2010 N-channel MOSFET
V(BR)DSS
RDS(on)MAX
I_D
9.5mΩ@4.5V
10mΩ@4V
20V
10.5mΩ@3.5V
10A
11.5mΩ@3.1V
13mΩ@2.5V
DFNWB5X2-6L-A
FEATURE
 TrenchFET Power MOSFET
 Small package DFNWB5×2-6L-A
MARKING
APPLICATION
● Load Switch for Portable Applications
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol Para
meter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Continuous Drain Current (note 1)
I_DM
Collector Current-Pulse(Note3)
R_θJA
Thermal Resistance from Junction to Ambient (note 2)
T_j
Junction Temperature
T_stg
Storage Temperature
T_L
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Value
20
±10
10
36
113.6
150
-55~+150
260
Unit
V
V
A
A
℃/W
℃
℃
℃
www.cj-elec.com
1
B,May,2015