CJMPD08 Datasheet, PDF (1/5 Pages) ZP Semiconductor – P-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-A Plastic-Encapsulate MOSFETS
CJMPD08 P-Channel Power MOSFET
DFNWB2*2-6L-A
V_(BR)DSS
-12V
R_DS(on)MAX
60mΩ@-4.5 V
80mΩ@-2.5 V
I_D
-3.6 A
General Description
The CJMPD08 uses advanced trench technology and design to
Provide excellent R_DS(on) with low gate charge. This device is suitable for use
in DC-DC conversion applications.
FEATURE
z Low Profile for Easy Fit in Thin Environments
z Bidirectional Current Folw with Common Source Configuration
APPLICATIONS
z Optimized for Battery and Load Management Applications in Portable Equipment
z Li-Ion Battery Charging and Protection Circuits
z High Power Management in Portable , Battery Powered Products
z High Side Load Switch
MARKING:
Equivalent Circuit
front
back
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Storage Temperature
Junction Temperature
www.cj-elec.com
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_j
T_stg
1
Value
-12
±8
-
0.7
178
150
-55 ~+150
Unit
V
A
W
℃/W
℃
F,June,2016