CJMP06 Datasheet, PDF (1/5 Pages) ZP Semiconductor – P-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-A Plastic-Encapsulate MOSFETS
CJMP06 P-Channel Power MOSFET
V_(BR)DSS
-20V
R_DS(on)MAX
I_D
110mΩ@-4.5 V
-2A
150mΩ@-2.5V
FEATURE
z Featuring a MOSFET and Schottky Diode
z Independent Pinout to each Device to Ease Circuit Design
z Ultra Low V_F Schottky
DFNWB2*2-6L-A
APPLICATIONS
z Li-Ion Battery Charging
z High Side DC-DC Conversion Circuits
z High Side Device for Small Brushless DC Motors
z Power Managemnet in Portable , Battery Powered Products
MARKING:
front
back
Equivalent Circuit
A1
PIN 1
N/C ₂
D3
K
6K
5G
D
4S
MOSFET MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Power Dissipation
Thermal Resistance from Junction to Ambient
Storage Temperature
Junction Temperature
Symbol
V_DS
V_GS
I_D
P_D
R_θJA
T_j
T_stg
Value
-20
±8
-2
0.7
178
150
-55 ~+150
www.cj-elec.com
1
Unit
V
A
W
℃/W
℃
D,May,2015