CJMNT31 Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – PNP Power Transistor with N-MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2×2-6L-I Power Management Transistors-MOSFET
CJMNT31 ^{PNP Power Transistor with N-MOSFET}
V_(BR)DSS/VR
20V
-30V
R_DS(on)MAX
360mΩ@4.5V
410mΩ@2.5V
480mΩ@1.8V
1.3Ω@1.5V
/
I_D/I_C
0.69A
- 2A
DFNWB2×2-6L-I
FEATURES
z Ultra low collector-to-emitter saturation voltage
z High DC current gain
z Small package DFNWB2x2-6L-I
MARKING: 31
APPLICATIONS
z Charging circuit
z Other power management in portable equipments
Equivalent circuit
MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol
Parameter
PNP Transistor
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous(Note1)
Collector Current-Continuous(Note2)
ICM
Collector Current-Pulse(Note3)
N-MOSFET
VDS
VGS
ID
Drain-Source Voltage
Gate-Source Voltage
Drain Current -Continuous(Note1)
Drain Current -Continuous(Note2)
IDM
Drain Current - Pulse(Note3)
Power Dissipation, Temperature and Thermal Resistance
PD
PC
RθJA
Tj
Tstg
TL
Power Dissipation
Power Dissipation (Tc=25℃ ,Note1)
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Lead Temperature
Value
-30
-30
-6
-3
-2
-6
20
±6
0.8
0.69
1.4
0.7
2.5
179
150
-55~+150
260
ZZZFMHOHFFRP
1
Unit
V
V
V
A
A
A
V
V
A
A
A
W
W
℃/W
℃
℃
℃
G,May,2015