CJMNP517 Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N Channel +P Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-U Plastic-Encapsulate MOSFETS
CJMNP517
V_(BR)DSS
12 V
-12V
N Channel +P Channel MOSFET
R_DS(on)MAX
24mΩ@^10V
27mΩ@4.5V
42mΩ@ 2.5V
72mΩ@1.8V
45 mΩ@-4.5V
60mΩ@-2.5V
90mΩ@-1.8V
I_D
6A
-4.1A
DFNWB2X2-6L-U
FEATURE
 Surface Mount Package
 Super High Density Cell Design for
Extremely Low R_DS(ON)
 Exceptional On-resistance and
Maximum DC Current Capability
APPLICATION
 Power Management In Note Book
 Portable Equipment
 Battery Powered System
 DC/DC Converter
 Load Switch
MARKING:
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
P-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Continous Source-Drain Diode Current
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
V_DS
V_GS
I_D
I_DM
I_S
V_DS
V_GS
I_D
I_DM
I_S
R_θJA
T_J
T_STG
T_L
Value
12
±12
6
24
6
-12
±12
-4.1
-16.4
-4.1
167
150
-55~+150
260
Unit
V
V
A
A
A
V
V
A
A
A
℃/W
℃
℃
℃
www.cj-elec.com
1
A-1,Feb,2015