CJMN2012 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS
CJMN2012 N-Channel MOSFET
V_(BR)DSS
20V
R_DS(on)MAX
11mΩ@ 4.5V
13mΩ@ ^2.5V
16 ^mΩ@1.8V
22mΩ@1.5V
41mΩ@1.2V
I_D
12A
DFNWB2×2-6L-J
FEATURES
 TrenchFET Power MOSFET
 Small package DFNWB2×2-6L-J
MARKING:
APPLICATION
 Load Switch for Portable Applications
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Symbol Para
meter
V_DS
Drain-Source Voltage
V_GS
Gate-Source Voltage
I_D
Continuous Drain Current (note 1)
I_DM
Collector Current-Pulse(Note3)
R_θJA
Thermal Resistance from Junction to Ambient (note 2)
T_j
Junction Temperature
T_stg
Storage Temperature
T_L
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Value
20
±10
12
40
167
150
-55~+150
260
www.cj-elec.com
1
Unit
V
V
A
A
℃/W
℃
℃
℃
C,Aug,2015