CJM7201 Datasheet, PDF (1/6 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel +P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-U Plastic-Encapsulate MOSFETS
CJM7201
V(BR)DSS
60V
-20V
N-Channel +P-Channel MOSFET
RDS(on)MAX
7Ω@10V
7Ω@5V
112mΩ@-4.5V
142mΩ@-2.5V
I_D
0.115A
-2.3A
DFNWB2×2-6L-U
FEATURE
 Surface Mount Package
 TrenchFET Power MOSFET
 High Density Cell Design for Low R_DS(ON)
 Voltage Controlled Small Signal Switch
 Rugged and Reliable
 High Saturation Current Capability
MARKING
APPLICATION
 Load Switch for Portable Devices
 DC/DC Converter
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
N-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
P-MOSFET
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (note 1)
Pulsed Drain Current (tp=10us)
Temperature and Thermal Resistance
Thermal Resistance from Junction to Ambient (note 1)
Junction Temperature
Storage Temperature
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
Symbol
V_DS
V_GS
I_D
I_DM
V_DS
V_GS
I_D
I_DM
R_θJA
T_J
T_STG
T_L
Value
60
±20
0.115
0.46
-20
±8
-2.3
-10
167
150
-55~+150
260
www.cj-elec.com
1
Unit
V
V
A
A
V
V
A
A
℃/W
℃
℃
℃
C,Jun,2016