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CJM3005 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – N-Channel MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS
CJM3005 N-Channel MOSFET
V(BR)DSS
RDS(on)MAX
ID
42 mΩ@10V
30V
44 mΩ@4.5V
5A
50 mΩ@2.5V
DFNWB2×2-6L-J
FEATURE
z TrenchFET Power MOSFET
z Low RDS(ON)
z Typical ESD Protection
MARKING
APPLICATION
z Ideal for Load Swith and Battery
Protection Applications
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
*Repetitive rating:Pluse width limited by junction temperature.
Symbol
VDS
VGS
ID
IDM*
RθJA
TJ
TSTG
Value
30
±10
5
20
250
150
-55~+150
Unit
V
V
A
A
℃/W
℃
℃
www.cj-elec.com
1
C,May,2015