CJM1216 Datasheet, PDF (1/6 Pages) ZP Semiconductor – P-Channel Power MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2*2-6L-J Plastic-Encapsulate MOSFETS
CJM1216 P-Channel Power MOSFET
V(BR)DSS
-12 V
RDS(on)MAX
21mΩ@-4.5V
27mΩ@-2.5V
I_D
-16A
DFNWB2×2-6L-J
1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
DESCRIPTION
The CJM1216 uses advanced trench technology to provide
excellent R_{DS(on) ,} low gate charge and operation with low gate voltage.
. This device is suitable for use as a load switching application
and a wide variety of other applications.
FEATURES
 Advanced trench MOSFET process technology
 Ultra low on-resistance with low gate charge
APPLICATIONS
 PWM application
 Load switch
 Battery charge in cellular handset
0$5.,1*
Equivalent Circuit
Maximum ratings (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (note 1)
Power Dissipation (note 2 , T_a=25℃)
Maximum Power Dissipation (note 3 , T_c=25℃)
Thermal Resistance from Junction to Ambient (note 4)
Thermal Resistance from Junction to Case (note 4)
Junction Temperature
Storage Temperature
Symbol
V_DSS
V_GS
I_D
I_DM
P_D
R_θJA
R_θJC
T_j
T_STG
www.cj-elec.com
1
Value
-12
±8
-16
-65
2.5
18
50
6.9
150
-55 ~+150
Unit
V
A
W
℃/W
℃
H,Sep,2016