CJM1208 Datasheet, PDF (1/5 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – P-Channel MOSFET

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB2X2-6L-J Plastic-Encapsulate MOSFETS
CJM1208 P-Channel MOSFET
V(BR)DSS
RDS(on)MAX
I_D
28mΩ@-4.5V
32mΩ@-3.7V
-12V
40mΩ@-2.5V
-8A
63mΩ@-1.8V
150mΩ@-1.5V
DFNWB2×2-6L-J
FEATURE
 Advanced trench MOSFET process technology
 Ultra low on-resistance with low gate charge
APPLICATION
 PWM application
 Load switch
 Battery charge in cellular handset
MARKING:
Equivalent Circuit
ABSOLUTE MAXIMUM RATINGS (T_a=25℃ unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Symbol
V_DS
V_GS
I_D
I_DM*
R_θJA
T_j
T_STG
*Repetitive rating：Pluse width limited by junction temperature.
Value
-12
±8
-8
-28
357
150
-55 ~+150
www.cj-elec.com
1
Unit
V
A
℃/W
℃
B,May,2015